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IMDQ75R090M1HXUMA1 Infineon Technologies
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IMDQ75R090M1HXUMA1

Mfr. No: IMDQ75R090M1HXUMA1
Mfr.: Infineon Technologies
Category: SiC MOSFETs
Description: SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet: IMDQ75R090M1HXUMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 750 V
Current - Continuous Drain (Id) @ 25°C 24A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
Rds On (Max) @ Id, Vgs 83mOhm @ 7.4A, 20V
Vgs(th) (Max) @ Id 5.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 18 V
Vgs (Max) +20V, -2V
Input Capacitance (Ciss) (Max) @ Vds 542 pF @ 500 V
FET Feature -
Power Dissipation (Max) 128W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-22-1
Package / Case 22-PowerBSOP Module
📦 Product Attributes
Packaging Reel
Standard Pack Qty 750
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,185
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 364 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Infineon Technologies manufactures the IMDQ75R090M1HXUMA1, a sic mosfets part used in electronic assemblies. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 750 V, current, continuous drain (id) @ 25°C: 24A (Tj), drive voltage: 15V, 20V and rds on (max) @ id, vgs: 83mOhm @ 7.4A, 20V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. You can source IMDQ75R090M1HXUMA1 through Simplytronix, with fast shipping and verified authenticity.

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