*For representation only.
IMLT40R015M2HXTMA1
| Mfr. No: | IMLT40R015M2HXTMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs SILICON CARBIDE MOSFET |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 400 V |
| Current - Continuous Drain (Id) @ 25°C | 111A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 19.1mOhm @ 27.1A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 9.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 18 V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 200 V |
| Power Dissipation (Max) | 341W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HDSOP-16-6 |
| Package / Case | 16-PowerSOP Module |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1800 |
5,057
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 364 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The IMLT40R015M2HXTMA1, made by Infineon Technologies, belongs to the mosfets product category. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 400 V, current, continuous drain (id) @ 25°C: 111A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 19.1mOhm @ 27.1A, 18V. This part has a typical lead time of 364 Days from factory. Simplytronix stocks IMLT40R015M2HXTMA1 for same-day shipping with genuine parts guaranteed.
