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IMSQ120R053M2HHXUMA1 Infineon Technologies
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IMSQ120R053M2HHXUMA1

Mfr. No: IMSQ120R053M2HHXUMA1
Mfr.: Infineon Technologies
Category: SiC MOSFETs
Description: SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datasheet: IMSQ120R053M2HHXUMA1 Datasheet (PDF)
⚙ Specifications
Technology SiCFET (Silicon Carbide)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Rds On (Max) @ Id, Vgs 53mOhm @ 13A, 18V
Vgs(th) (Max) @ Id 5.1V @ 4.1mA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 0V
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 800V
Power - Max 234W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Supplier Device Package PG-HDSOP-16-221
📦 Product Attributes
Packaging Reel
Standard Pack Qty 750
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,680
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 315 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

IMSQ120R053M2HHXUMA1 is a sic mosfets part produced by Infineon Technologies for use across a range of applications. Notable characteristics of this part include technology: SiCFET (Silicon Carbide), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 45A (Tc) and rds on (max) @ id, vgs: 53mOhm @ 13A, 18V. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. Order IMSQ120R053M2HHXUMA1 from Simplytronix for authenticated stock and same-day order processing.

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