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IMT40R036M2HXTMA1 Infineon Technologies
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IMT40R036M2HXTMA1

Mfr. No: IMT40R036M2HXTMA1
Mfr.: Infineon Technologies
Category: SiC MOSFETs
Description: SiC MOSFETs SILICON CARBIDE MOSFET
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 45.7mOhm @ 11.1A, 18V
Vgs(th) (Max) @ Id 5.6V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 1170 pF @ 200 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-2
Package / Case 8-PowerSFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,575
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New at Mouser
Lead Time 364 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Infineon Technologies manufactures the IMT40R036M2HXTMA1, a sic mosfets part used in electronic assemblies. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 400 V, current, continuous drain (id) @ 25°C: 7.6A (Ta), 50A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 45.7mOhm @ 11.1A, 18V. This part has a typical lead time of 364 Days from factory. You can source IMT40R036M2HXTMA1 through Simplytronix, with fast shipping and verified authenticity.

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