*For representation only.
IMT65R075M2HXUMA1
| Mfr. No: | IMT65R075M2HXUMA1 |
| Mfr.: | Infineon Technologies |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SILICON CARBIDE MOSFET |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 33.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 11.9A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 2.4mA |
| Gate Charge (Qg) (Max) @ Vgs | 14.9 nC @ 18 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 516 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 178W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8 |
| Package / Case | 8-PowerSFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2000 |
11,607
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 364 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Infineon Technologies, the IMT65R075M2HXUMA1 is classified under sic mosfets. It features FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 33.7A (Tc), drive voltage: 15V, 20V and rds on (max) @ id, vgs: 95mOhm @ 11.9A, 18V. This part has a typical lead time of 364 Days from factory. Get IMT65R075M2HXUMA1 from Simplytronix, shipped same day with a genuine parts guarantee.
