*For representation only.
IMT65R083M1HXUMA1
| Mfr. No: | IMT65R083M1HXUMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs SILICON CARBIDE MOSFET |
| Lifecycle: | Not For New Designs |
| Datasheet: | IMT65R083M1HXUMA1 Datasheet (PDF) |
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Specifications
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-2 |
| Package / Case | 8-PowerSFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2000 |
8,262
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 364 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Infineon Technologies's IMT65R083M1HXUMA1 is a widely used mosfets part in electronic designs. This part is specified with technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V and drive voltage: 18V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies IMT65R083M1HXUMA1 with same-day shipping and guaranteed authenticity.
