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IMW65R007M2HXKSA1 Infineon Technologies
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IMW65R007M2HXKSA1

Mfr. No: IMW65R007M2HXKSA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs SILICON CARBIDE MOSFET
Datasheet: IMW65R007M2HXKSA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 171A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
Rds On (Max) @ Id, Vgs 6.1mOhm @ 146.3A, 20V
Vgs(th) (Max) @ Id 5.6V @ 29.7mA
Gate Charge (Qg) (Max) @ Vgs 179 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 6359 pF @ 400 V
FET Feature -
Power Dissipation (Max) 625W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-U06
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 240
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,886
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 364 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The IMW65R007M2HXKSA1, made by Infineon Technologies, belongs to the mosfets product category. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 171A (Tc), drive voltage: 15V, 20V and rds on (max) @ id, vgs: 6.1mOhm @ 146.3A, 20V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IMW65R007M2HXKSA1 for same-day shipping with genuine parts guaranteed.

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