| Mfr. No: | IMWH170R650M1XKSA1 |
| Mfr.: | Infineon Technologies |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SIC DISCRETE |
| Lifecycle: | Active |
| Datasheet: | IMWH170R650M1XKSA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V, 15V |
| Rds On (Max) @ Id, Vgs | 580mOhm @ 1.5A, 15V |
| Vgs(th) (Max) @ Id | 5.7V @ 1.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 8.1 nC @ 12 V |
| Vgs (Max) | 15V, 12V |
| Input Capacitance (Ciss) (Max) @ Vds | 337 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-U04 |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Standard Pack Qty | 240 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 315 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Infineon Technologies's IMWH170R650M1XKSA1 is a widely used sic mosfets part in electronic designs. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1700 V, current, continuous drain (id) @ 25°C: 7.5A (Tc), drive voltage: 12V, 15V and rds on (max) @ id, vgs: 580mOhm @ 1.5A, 15V. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies IMWH170R650M1XKSA1 with same-day shipping and guaranteed authenticity.