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IMYH200R012M1HXKSA1 Infineon Technologies
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IMYH200R012M1HXKSA1

Mfr. No: IMYH200R012M1HXKSA1
Mfr.: Infineon Technologies
Category: SiC MOSFETs
Description: SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
Datasheet: IMYH200R012M1HXKSA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 2000 V
Current - Continuous Drain (Id) @ 25°C 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 16.5mOhm @ 60A, 18V
Vgs(th) (Max) @ Id 5.5V @ 48mA
Gate Charge (Qg) (Max) @ Vgs 246 nC @ 18 V
Vgs (Max) +20V, -7V
FET Feature -
Power Dissipation (Max) 552W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-4-U04
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 240
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,311
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 315 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The IMYH200R012M1HXKSA1, made by Infineon Technologies, belongs to the sic mosfets product category. Key specifications include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 2000 V, current, continuous drain (id) @ 25°C: 123A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 16.5mOhm @ 60A, 18V. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IMYH200R012M1HXKSA1 for same-day shipping with genuine parts guaranteed.

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