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IPB016N06L3GATMA1 Infineon Technologies
*For representation only.

IPB016N06L3GATMA1

Mfr. No: IPB016N06L3GATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs N-Ch 60V 180A D2PAK-6 OptiMOS 3
Lifecycle: Active
Datasheet: IPB016N06L3GATMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 196µA
Gate Charge (Qg) (Max) @ Vgs 166 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 28000 pF @ 30 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D2PAK (6 Leads + Tab)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging IPB016N06L3 G
Suggested Replacement
7,294
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 8 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

The IPB016N06L3GATMA1 from Infineon Technologies falls under the mosfets category. This component is defined by FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 180A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 1.6mOhm @ 100A, 10V. This part has a typical lead time of 8 Days from factory and ships with a full manufacturer datasheet available for download. IPB016N06L3GATMA1 is available through Simplytronix, sourced and verified for authenticity.

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