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IPB021N10NM5LF2ATMA1 Infineon Technologies
*For representation only.

IPB021N10NM5LF2ATMA1

Mfr. No: IPB021N10NM5LF2ATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs OptiMOS 5 Linear FET 2, 100 V
Datasheet: IPB021N10NM5LF2ATMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 176A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 15V
Vgs(th) (Max) @ Id 3.9V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 17000 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,295
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 8 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

As a mosfets component, the IPB021N10NM5LF2ATMA1 is manufactured and supplied by Infineon Technologies. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 30A (Ta), 176A (Tc), drive voltage: 10V, 15V and rds on (max) @ id, vgs: 2mOhm @ 100A, 15V. This part has a typical lead time of 8 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IPB021N10NM5LF2ATMA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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