| Mfr. No: | IPB024N10N5ATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs DIFFERENTIATED MOSFETS |
| Datasheet: | IPB024N10N5ATMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 183µA |
| Gate Charge (Qg) (Max) @ Vgs | 138 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10200 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 11 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
The IPB024N10N5ATMA1, made by Infineon Technologies, belongs to the mosfets product category. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 180A (Tc), drive voltage: 6V, 10V and rds on (max) @ id, vgs: 2.4mOhm @ 90A, 10V. This part has a typical lead time of 11 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IPB024N10N5ATMA1 for same-day shipping with genuine parts guaranteed.