| Mfr. No: | IPB095N20NM6ATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs OptiMOS 6 Power-Transistor, 200 V |
| Datasheet: | IPB095N20NM6ATMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 116A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 15V |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 62A, 15V |
| Vgs(th) (Max) @ Id | 4.5V @ 186µA |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-U01 |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 52 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The IPB095N20NM6ATMA1, made by Infineon Technologies, belongs to the mosfets product category. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 200 V, current, continuous drain (id) @ 25°C: 13A (Ta), 116A (Tc), drive voltage: 10V, 15V and rds on (max) @ id, vgs: 8.7mOhm @ 62A, 15V. This part has a typical lead time of 52 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IPB095N20NM6ATMA1 for same-day shipping with genuine parts guaranteed.