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IPB60R190C6ATMA1 Infineon Technologies
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IPB60R190C6ATMA1

Mfr. No: IPB60R190C6ATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs N-Ch 600V 20.2A D2PAK-2 CoolMOS C6
Lifecycle: Not For New Designs
Datasheet: IPB60R190C6ATMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 100 V
Power Dissipation (Max) 151W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging IPB60R190C6
Suggested Replacement
5,037
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle Not Recommended for New Designs
Lead Time 56 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

The IPB60R190C6ATMA1 from Infineon Technologies falls under the mosfets category. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 600 V, current, continuous drain (id) @ 25°C: 20.2A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 190mOhm @ 9.5A, 10V. This part has a typical lead time of 56 Days from factory and ships with a full manufacturer datasheet available for download. IPB60R190C6ATMA1 is available through Simplytronix, sourced and verified for authenticity.

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