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IPB65R090CFD7ATMA1 Infineon Technologies
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IPB65R090CFD7ATMA1

Mfr. No: IPB65R090CFD7ATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs HIGH POWER_NEW
Lifecycle: Active
Datasheet: IPB65R090CFD7ATMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2513 pF @ 400 V
FET Feature -
Power Dissipation (Max) 127W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,346
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 8 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

IPB65R090CFD7ATMA1 is a mosfets part produced by Infineon Technologies for use across a range of applications. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 25A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 90mOhm @ 12.5A, 10V. This part has a typical lead time of 8 Days from factory and ships with a full manufacturer datasheet available for download. Order IPB65R090CFD7ATMA1 from Simplytronix for authenticated stock and same-day order processing.

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