*For representation only.
IPBE65R190CFD7AATMA1
| Mfr. No: | IPBE65R190CFD7AATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs AUTOMOTIVE_COOLMOS |
| Datasheet: | IPBE65R190CFD7AATMA1 Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 6.4A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 320µA |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1291 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 77W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-11 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
13,181
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
The IPBE65R190CFD7AATMA1 from Infineon Technologies falls under the mosfets category. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 14A (Tc), rds on (max) @ id, vgs: 190mOhm @ 6.4A, 10V and vgs(th) (max) @ id: 4.5V @ 320µA. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. IPBE65R190CFD7AATMA1 is available through Simplytronix, sourced and verified for authenticity.
