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IPD096N08N3GATMA1 Infineon Technologies
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IPD096N08N3GATMA1

Mfr. No: IPD096N08N3GATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs IFX FET > 60-80V
Datasheet: IPD096N08N3GATMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 9.6mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2410 pF @ 40 V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,568
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 91 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The IPD096N08N3GATMA1 from Infineon Technologies falls under the mosfets category. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 80 V, current, continuous drain (id) @ 25°C: 73A (Tc), drive voltage: 6V, 10V and rds on (max) @ id, vgs: 9.6mOhm @ 46A, 10V. This part has a typical lead time of 91 Days from factory and ships with a full manufacturer datasheet available for download. IPD096N08N3GATMA1 is available through Simplytronix, sourced and verified for authenticity.

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