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IPD19DP10NMATMA1 Infineon Technologies
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IPD19DP10NMATMA1

Mfr. No: IPD19DP10NMATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs IFX FET >80 - 100V
Datasheet: IPD19DP10NMATMA1 Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta), 13.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 186mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 1.04mA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,630
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 105 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

Manufactured by Infineon Technologies, the IPD19DP10NMATMA1 is classified under mosfets. This component is defined by FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 2.6A (Ta), 13.7A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 186mOhm @ 12A, 10V. This part has a typical lead time of 105 Days from factory and ships with a full manufacturer datasheet available for download. Get IPD19DP10NMATMA1 from Simplytronix, shipped same day with a genuine parts guarantee.

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