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IPD30N10S3L34ATMA1 Infineon Technologies
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IPD30N10S3L34ATMA1

Mfr. No: IPD30N10S3L34ATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs N-Ch 100V 30A DPAK-2 OptiMOS-T
Datasheet: IPD30N10S3L34ATMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 31mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1976 pF @ 25 V
FET Feature -
Power Dissipation (Max) 57W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging IPD30N10S3L-34
Suggested Replacement IPD30N10S3L34
12,721
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle Not Recommended for New Designs
Lead Time 9 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Infineon Technologies manufactures the IPD30N10S3L34ATMA1, a mosfets part used in electronic assemblies. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 30A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 31mOhm @ 30A, 10V. This part has a typical lead time of 9 Days from factory and ships with a full manufacturer datasheet available for download. You can source IPD30N10S3L34ATMA1 through Simplytronix, with fast shipping and verified authenticity.

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