| Mfr. No: | IPD80R2K4P7ATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs LOW POWER_NEW |
| Lifecycle: | Active |
| Datasheet: | IPD80R2K4P7ATMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 800mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 500 V |
| FET Feature | - |
| Power Dissipation (Max) | 22W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 17 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
IPD80R2K4P7ATMA1 is a mosfets part produced by Infineon Technologies for use across a range of applications. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 800 V, current, continuous drain (id) @ 25°C: 2.5A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 2.4Ohm @ 800mA, 10V. This part has a typical lead time of 17 Days from factory and ships with a full manufacturer datasheet available for download. Order IPD80R2K4P7ATMA1 from Simplytronix for authenticated stock and same-day order processing.