| Mfr. No: | IPD90N06S4L03ATMA2 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs MOSFET |
| Datasheet: | IPD90N06S4L03ATMA2 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-11 |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 63 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
Infineon Technologies manufactures the IPD90N06S4L03ATMA2, a mosfets part used in electronic assemblies. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 90A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 3.5mOhm @ 90A, 10V. This part has a typical lead time of 63 Days from factory and ships with a full manufacturer datasheet available for download. You can source IPD90N06S4L03ATMA2 through Simplytronix, with fast shipping and verified authenticity.