*For representation only.
IPD95R450PFD7ATMA1
| Mfr. No: | IPD95R450PFD7ATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs LOW POWER_NEW |
| Datasheet: | IPD95R450PFD7ATMA1 Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 950 V |
| Current - Continuous Drain (Id) @ 25°C | 13.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 7.2A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 360µA |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
14,458
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The IPD95R450PFD7ATMA1 from Infineon Technologies falls under the mosfets category. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 950 V, current, continuous drain (id) @ 25°C: 13.3A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 450mOhm @ 7.2A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. IPD95R450PFD7ATMA1 is available through Simplytronix, sourced and verified for authenticity.
