| Mfr. No: | IPDD60R090CFD7XTMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs HIGH POWER_NEW |
| Lifecycle: | Active |
| Datasheet: | IPDD60R090CFD7XTMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 9.3A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 470µA |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1747 pF @ 400 V |
| Power Dissipation (Max) | 227W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HDSOP-10-1 |
| Package / Case | 10-PowerSOP Module |
| Packaging | Reel |
| Standard Pack Qty | 1700 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 20 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
Infineon Technologies manufactures the IPDD60R090CFD7XTMA1, a mosfets part used in electronic assemblies. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 600 V, current, continuous drain (id) @ 25°C: 33A (Tc), rds on (max) @ id, vgs: 90mOhm @ 9.3A, 10V and vgs(th) (max) @ id: 4.5V @ 470µA. This part has a typical lead time of 20 Days from factory and ships with a full manufacturer datasheet available for download. You can source IPDD60R090CFD7XTMA1 through Simplytronix, with fast shipping and verified authenticity.