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IPDQ60R007CM8XTMA1 Infineon Technologies
*For representation only.

IPDQ60R007CM8XTMA1

Mfr. No: IPDQ60R007CM8XTMA1
Mfr.: Infineon Technologies
Category: SiC MOSFETs
Description: SiC MOSFETs HIGH POWER_NEW
Lifecycle: Active
Datasheet: IPDQ60R007CM8XTMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 288A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.7V @ 3.24mA
Gate Charge (Qg) (Max) @ Vgs 370 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 16385 pF @ 400 V
Power Dissipation (Max) 1.249kW (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-22
Package / Case 22-PowerBSOP Module
📦 Product Attributes
Packaging Reel
Standard Pack Qty 750
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,217
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 364 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

As a sic mosfets component, the IPDQ60R007CM8XTMA1 is manufactured and supplied by Infineon Technologies. Notable characteristics of this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 600 V, current, continuous drain (id) @ 25°C: 288A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 7mOhm @ 100A, 10V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IPDQ60R007CM8XTMA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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