| Mfr. No: | IPDQ60R007CM8XTMA1 |
| Mfr.: | Infineon Technologies |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs HIGH POWER_NEW |
| Lifecycle: | Active |
| Datasheet: | IPDQ60R007CM8XTMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 288A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4.7V @ 3.24mA |
| Gate Charge (Qg) (Max) @ Vgs | 370 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 16385 pF @ 400 V |
| Power Dissipation (Max) | 1.249kW (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HDSOP-22 |
| Package / Case | 22-PowerBSOP Module |
| Packaging | Reel |
| Standard Pack Qty | 750 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 364 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
As a sic mosfets component, the IPDQ60R007CM8XTMA1 is manufactured and supplied by Infineon Technologies. Notable characteristics of this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 600 V, current, continuous drain (id) @ 25°C: 288A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 7mOhm @ 100A, 10V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IPDQ60R007CM8XTMA1 in stock, backed by a genuine parts guarantee and quick dispatch.