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IPG20N04S4L11AATMA1 Infineon Technologies
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IPG20N04S4L11AATMA1

Mfr. No: IPG20N04S4L11AATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs MOSFET_(20V 40V)
Lifecycle: Not For New Designs
Datasheet: IPG20N04S4L11AATMA1 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 11.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 15µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 25V
Power - Max 41W
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging IPG20N04S4L-11A
Suggested Replacement IAUCN04S7L053DAT
9,823
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle Not Recommended for New Designs
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Infineon Technologies manufactures the IPG20N04S4L11AATMA1, a mosfets part used in electronic assemblies. Among its key specs are technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 20A and rds on (max) @ id, vgs: 11.6mOhm @ 17A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. You can source IPG20N04S4L11AATMA1 through Simplytronix, with fast shipping and verified authenticity.

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