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IPG20N06S2L50AATMA1 Infineon Technologies
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IPG20N06S2L50AATMA1

Mfr. No: IPG20N06S2L50AATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs N-Ch 55V 20A TDSON-8
Lifecycle: Active
Datasheet: IPG20N06S2L50AATMA1 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 50mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 19µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
Power - Max 51W
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,064
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

The IPG20N06S2L50AATMA1 from Infineon Technologies falls under the mosfets category. Among its key specs are technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 55V, current, continuous drain (id) @ 25°C: 20A and rds on (max) @ id, vgs: 50mOhm @ 15A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. IPG20N06S2L50AATMA1 is available through Simplytronix, sourced and verified for authenticity.

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