| Mfr. No: | IPG20N06S4L11ATMA2 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs MOSFET_)40V 60V) |
| Datasheet: | IPG20N06S4L11ATMA2 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 28µA |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4020pF @ 25V |
| Power - Max | 65W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-10 |
| Packaging | Reel |
| Standard Pack Qty | 5000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Infineon Technologies manufactures the IPG20N06S4L11ATMA2, a mosfets part used in electronic assemblies. Among its key specs are technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 20A (Tc) and rds on (max) @ id, vgs: 11.2mOhm @ 17A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. You can source IPG20N06S4L11ATMA2 through Simplytronix, with fast shipping and verified authenticity.