| Mfr. No: | IPG20N10S4L35AATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs MOSFET_(75V 120V( |
| Datasheet: | IPG20N10S4L35AATMA1 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 16µA |
| Gate Charge (Qg) (Max) @ Vgs | 17.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1105pF @ 25V |
| Power - Max | 43W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-10 |
| Packaging | Reel |
| Standard Pack Qty | 5000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
IPG20N10S4L35AATMA1 is a mosfets component manufactured by Infineon Technologies. Among its key specs are technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 100V, current, continuous drain (id) @ 25°C: 20A and rds on (max) @ id, vgs: 35mOhm @ 17A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers IPG20N10S4L35AATMA1 in stock, verified authentic and ready for same-day dispatch.