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IPP044N03LF2SAKSA1 Infineon Technologies
*For representation only.

IPP044N03LF2SAKSA1

Mfr. No: IPP044N03LF2SAKSA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs IR FET UP TO 60V
Lifecycle: Active
Datasheet: IPP044N03LF2SAKSA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.35mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.35V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-U05
Package / Case TO-220-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,653
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 21 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by Infineon Technologies, the IPP044N03LF2SAKSA1 is classified under mosfets. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 22A (Ta), 53A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 4.35mOhm @ 30A, 10V. This part has a typical lead time of 21 Days from factory and ships with a full manufacturer datasheet available for download. Get IPP044N03LF2SAKSA1 from Simplytronix, shipped same day with a genuine parts guarantee.

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