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IPP330P10NMAKSA1 Infineon Technologies
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IPP330P10NMAKSA1

Mfr. No: IPP330P10NMAKSA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs IFX FET >80 - 100V
Datasheet: IPP330P10NMAKSA1 Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6.9A (Ta), 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 33mOhm @ 53A, 10V
Vgs(th) (Max) @ Id 4V @ 5.55mA
Gate Charge (Qg) (Max) @ Vgs 236 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,981
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 91 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Infineon Technologies manufactures the IPP330P10NMAKSA1, a mosfets part used in electronic assemblies. This part is specified with FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 6.9A (Ta), 62A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 33mOhm @ 53A, 10V. This part has a typical lead time of 91 Days from factory and ships with a full manufacturer datasheet available for download. You can source IPP330P10NMAKSA1 through Simplytronix, with fast shipping and verified authenticity.

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