*For representation only.
IPT014N08NM5ATMA1
| Mfr. No: | IPT014N08NM5ATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs IFX FET > 60-80V |
| Datasheet: | IPT014N08NM5ATMA1 Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 37A (Ta), 331A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 150A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 280µA |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 14000 pF @ 40 V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-1 |
| Package / Case | 8-PowerSFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2000 |
8,943
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 119 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
The IPT014N08NM5ATMA1 from Infineon Technologies falls under the mosfets category. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 80 V, current, continuous drain (id) @ 25°C: 37A (Ta), 331A (Tc), drive voltage: 6V, 10V and rds on (max) @ id, vgs: 1.4mOhm @ 150A, 10V. This part has a typical lead time of 119 Days from factory and ships with a full manufacturer datasheet available for download. IPT014N08NM5ATMA1 is available through Simplytronix, sourced and verified for authenticity.
