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IPT019N08N5ATMA1 Infineon Technologies
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IPT019N08N5ATMA1

Mfr. No: IPT019N08N5ATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs IFX FET > 60-80V
Lifecycle: Active
Datasheet: IPT019N08N5ATMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 247A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 150A, 10V
Vgs(th) (Max) @ Id 3.8V @ 159µA
Gate Charge (Qg) (Max) @ Vgs 127 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9200 pF @ 40 V
FET Feature -
Power Dissipation (Max) 231W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,889
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 77 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

Manufactured by Infineon Technologies, the IPT019N08N5ATMA1 is classified under mosfets. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 80 V, current, continuous drain (id) @ 25°C: 32A (Ta), 247A (Tc), drive voltage: 6V, 10V and rds on (max) @ id, vgs: 1.9mOhm @ 150A, 10V. This part has a typical lead time of 77 Days from factory and ships with a full manufacturer datasheet available for download. Get IPT019N08N5ATMA1 from Simplytronix, shipped same day with a genuine parts guarantee.

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