| Mfr. No: | IPT019N08N5ATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs IFX FET > 60-80V |
| Lifecycle: | Active |
| Datasheet: | IPT019N08N5ATMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 247A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 150A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 159µA |
| Gate Charge (Qg) (Max) @ Vgs | 127 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 40 V |
| FET Feature | - |
| Power Dissipation (Max) | 231W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-1 |
| Package / Case | 8-PowerSFN |
| Packaging | Reel |
| Standard Pack Qty | 2000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 77 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
Manufactured by Infineon Technologies, the IPT019N08N5ATMA1 is classified under mosfets. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 80 V, current, continuous drain (id) @ 25°C: 32A (Ta), 247A (Tc), drive voltage: 6V, 10V and rds on (max) @ id, vgs: 1.9mOhm @ 150A, 10V. This part has a typical lead time of 77 Days from factory and ships with a full manufacturer datasheet available for download. Get IPT019N08N5ATMA1 from Simplytronix, shipped same day with a genuine parts guarantee.