*For representation only.
IPTC019N10NM5ATMA1
| Mfr. No: | IPTC019N10NM5ATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs IFX FET >80 - 100V |
| Datasheet: | IPTC019N10NM5ATMA1 Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 279A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 210µA |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HDSOP-16-2 |
| Package / Case | 16-PowerSOP Module |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1800 |
3,050
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | |
| Lead Time | 22 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
IPTC019N10NM5ATMA1 is a mosfets component manufactured by Infineon Technologies. This component is defined by FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 31A (Ta), 279A (Tc), drive voltage: 6V, 10V and rds on (max) @ id, vgs: 1.9mOhm @ 100A, 10V. This part has a typical lead time of 22 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers IPTC019N10NM5ATMA1 in stock, verified authentic and ready for same-day dispatch.
