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IPU80R1K4P7AKMA1 Infineon Technologies
*For representation only.

IPU80R1K4P7AKMA1

Mfr. No: IPU80R1K4P7AKMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs LOW POWER_NEW
Lifecycle: Obsolete
Datasheet: IPU80R1K4P7AKMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 10.05 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 500 V
FET Feature -
Power Dissipation (Max) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO251-3-21
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement IPU80R900P7AKMA1
3,850
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle Not Recommended for New Designs
Lead Time 133 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

The IPU80R1K4P7AKMA1, made by Infineon Technologies, belongs to the mosfets product category. Notable characteristics of this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 800 V, current, continuous drain (id) @ 25°C: 4A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 1.4Ohm @ 1.4A, 10V. This part has a typical lead time of 133 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IPU80R1K4P7AKMA1 for same-day shipping with genuine parts guaranteed.

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