| Mfr. No: | IPU80R1K4P7AKMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs LOW POWER_NEW |
| Lifecycle: | Obsolete |
| Datasheet: | IPU80R1K4P7AKMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.05 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 500 V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3-21 |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Packaging | Tube |
| Standard Pack Qty | 1500 |
| Alternate Packaging | |
| Suggested Replacement | IPU80R900P7AKMA1 |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 133 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
The IPU80R1K4P7AKMA1, made by Infineon Technologies, belongs to the mosfets product category. Notable characteristics of this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 800 V, current, continuous drain (id) @ 25°C: 4A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 1.4Ohm @ 1.4A, 10V. This part has a typical lead time of 133 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IPU80R1K4P7AKMA1 for same-day shipping with genuine parts guaranteed.