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IPW60R041C6FKSA1 Infineon Technologies
*For representation only.

IPW60R041C6FKSA1

Mfr. No: IPW60R041C6FKSA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs N-Ch 650V 77.5A TO247-3 CoolMOS C6
Datasheet: IPW60R041C6FKSA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 77.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 44.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 2.96mA
Gate Charge (Qg) (Max) @ Vgs 290 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6530 pF @ 10 V
FET Feature -
Power Dissipation (Max) 481W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-1
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 240
🔁 Alternate / Replacement Parts
Alternate Packaging IPW60R041C6
Suggested Replacement
10,782
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 8 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

IPW60R041C6FKSA1 is a mosfets component manufactured by Infineon Technologies. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 600 V, current, continuous drain (id) @ 25°C: 77.5A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 41mOhm @ 44.4A, 10V. This part has a typical lead time of 8 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers IPW60R041C6FKSA1 in stock, verified authentic and ready for same-day dispatch.

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