| Mfr. No: | IPW60R120P7XKSA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs HIGH POWER_NEW |
| Datasheet: | IPW60R120P7XKSA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 8.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 410µA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1544 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Standard Pack Qty | 240 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 19 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The IPW60R120P7XKSA1, made by Infineon Technologies, belongs to the mosfets product category. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 600 V, current, continuous drain (id) @ 25°C: 26A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 120mOhm @ 8.2A, 10V. This part has a typical lead time of 19 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IPW60R120P7XKSA1 for same-day shipping with genuine parts guaranteed.