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IPW65R080CFDAFKSA1 Infineon Technologies
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IPW65R080CFDAFKSA1

Mfr. No: IPW65R080CFDAFKSA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs N-Ch 650V 43.3A TO247-3
Lifecycle: Active
Datasheet: IPW65R080CFDAFKSA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs 161 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4440 pF @ 100 V
FET Feature -
Power Dissipation (Max) 391W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 240
🔁 Alternate / Replacement Parts
Alternate Packaging IPW65R080CFDA
Suggested Replacement IPW65R080CFDA
4,751
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 20 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Infineon Technologies manufactures the IPW65R080CFDAFKSA1, a mosfets part used in electronic assemblies. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 43.3A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 80mOhm @ 17.6A, 10V. This part has a typical lead time of 20 Days from factory and ships with a full manufacturer datasheet available for download. You can source IPW65R080CFDAFKSA1 through Simplytronix, with fast shipping and verified authenticity.

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