*For representation only.
IPW95R130PFD7XKSA1
| Mfr. No: | IPW95R130PFD7XKSA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs HIGH POWER_NEW |
| Lifecycle: | Active |
| Datasheet: | IPW95R130PFD7XKSA1 Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 950 V |
| Current - Continuous Drain (Id) @ 25°C | 36.5A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 141 nC @ 10 V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 227W |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-41 |
| Package / Case | TO-247-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 240 |
4,926
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 19 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
The IPW95R130PFD7XKSA1, made by Infineon Technologies, belongs to the mosfets product category. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 950 V, current, continuous drain (id) @ 25°C: 36.5A, drive voltage: 10V and rds on (max) @ id, vgs: -. This part has a typical lead time of 19 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IPW95R130PFD7XKSA1 for same-day shipping with genuine parts guaranteed.
