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IPZA65R040CM8XKSA1 Infineon Technologies
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IPZA65R040CM8XKSA1

Mfr. No: IPZA65R040CM8XKSA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs 650V CoolMOS CM8 Power Transistor
Datasheet: IPZA65R040CM8XKSA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.7V @ 680µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3796 pF @ 400 V
FET Feature -
Power Dissipation (Max) 329W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-4-U02
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 240
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,001
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 8 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The IPZA65R040CM8XKSA1, made by Infineon Technologies, belongs to the mosfets product category. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 62A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 40mOhm @ 25A, 10V. This part has a typical lead time of 8 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IPZA65R040CM8XKSA1 for same-day shipping with genuine parts guaranteed.

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