| Mfr. No: | IQE008N03LM5SCATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs IFX FET 15V-30V |
| Datasheet: | IQE008N03LM5SCATMA1 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | - |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | PG-WHSON-8 |
| Packaging | Reel |
| Standard Pack Qty | 6000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 364 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
IQE008N03LM5SCATMA1 is a mosfets component manufactured by Infineon Technologies. It features technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: - and rds on (max) @ id, vgs: -. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers IQE008N03LM5SCATMA1 in stock, verified authentic and ready for same-day dispatch.