*For representation only.
IQE013N04LM6ATMA1
| Mfr. No: | IQE013N04LM6ATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs IFX FET 40V |
| Lifecycle: | Active |
| Datasheet: | IQE013N04LM6ATMA1 Datasheet (PDF) |
⚙
Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 205A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 51µA |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 20 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 107W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TSON-8-4 |
| Package / Case | 8-PowerTDFN |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
9,146
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | In Transition |
| Lifecycle | |
| Lead Time | 17 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
Infineon Technologies's IQE013N04LM6ATMA1 is a widely used mosfets part in electronic designs. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 31A (Ta), 205A (Tc), rds on (max) @ id, vgs: 1.35mOhm @ 20A, 10V and vgs(th) (max) @ id: 2V @ 51µA. This part has a typical lead time of 17 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies IQE013N04LM6ATMA1 with same-day shipping and guaranteed authenticity.
