| Mfr. No: | IQE036N08NM6CGSCATMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs OptiMOS 6 n-channel power MOSFET 80 V |
| Datasheet: | IQE036N08NM6CGSCATMA1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 16.7A (Ta), 118A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 49.8µA |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 40 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-WHTFN-9-1 |
| Package / Case | 9-PowerWDFN |
| Packaging | Reel |
| Standard Pack Qty | 6000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 52 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
As a mosfets component, the IQE036N08NM6CGSCATMA1 is manufactured and supplied by Infineon Technologies. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 80 V, current, continuous drain (id) @ 25°C: 16.7A (Ta), 118A (Tc), drive voltage: 8V, 10V and rds on (max) @ id, vgs: 3.6mOhm @ 30A, 10V. This part has a typical lead time of 52 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IQE036N08NM6CGSCATMA1 in stock, backed by a genuine parts guarantee and quick dispatch.