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IQEH42NE2LM7ZCGSCATMA1 Infineon Technologies
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IQEH42NE2LM7ZCGSCATMA1

Mfr. No: IQEH42NE2LM7ZCGSCATMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs OptiMOS 7 Power Transistor, 25 V
Datasheet: IQEH42NE2LM7ZCGSCATMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 59A (Ta), 460A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.42mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.7V @ 432µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 12 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-WHTFN-9-1
Package / Case 9-PowerWDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 6000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,186
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS
Lifecycle New Product
Lead Time 364 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

As a mosfets component, the IQEH42NE2LM7ZCGSCATMA1 is manufactured and supplied by Infineon Technologies. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 25 V, current, continuous drain (id) @ 25°C: 59A (Ta), 460A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 0.42mOhm @ 20A, 10V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IQEH42NE2LM7ZCGSCATMA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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