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IRF6644TRPBF Infineon Technologies
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IRF6644TRPBF

Mfr. No: IRF6644TRPBF
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vg
Datasheet: IRF6644TRPBF Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id 4.8V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2210 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MN
Package / Case DirectFET™ Isometric MN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 4800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,310
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

IRF6644TRPBF is a mosfets part produced by Infineon Technologies for use across a range of applications. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 10.3A (Ta), 60A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 13mOhm @ 10.3A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Order IRF6644TRPBF from Simplytronix for authenticated stock and same-day order processing.

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