*For representation only.
IRF7341TRPBFXTMA1
| Mfr. No: | IRF7341TRPBFXTMA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFETs |
| Description: | MOSFETs PLANAR FET |
| Lifecycle: | Active |
| Datasheet: | IRF7341TRPBFXTMA1 Datasheet (PDF) |
⚙
Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V |
| Power - Max | 2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | PG-DSO-8-902 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 4000 |
3,862
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 63 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
The IRF7341TRPBFXTMA1, made by Infineon Technologies, belongs to the mosfets product category. This component is defined by technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 55V, current, continuous drain (id) @ 25°C: 4.7A (Tc) and rds on (max) @ id, vgs: 50mOhm @ 4.7A, 10V. This part has a typical lead time of 63 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IRF7341TRPBFXTMA1 for same-day shipping with genuine parts guaranteed.
