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IRFB4137PBFAKSA1

Mfr. No: IRFB4137PBFAKSA1
Mfr.: Infineon Technologies
Description: IR FET >60-400V
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 69mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5168 pF @ 50 V
FET Feature -
Power Dissipation (Max) 341W (Tc)
Operating Temperature -55°C ~ 175°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-904
Package / Case TO-220-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,444
Units In Stock
📦 Reel
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🔑 Key Specifications
Category
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 140 Days (from factory)
📄 Documentation
Datasheet not available
ℹ Product Overview

Infineon Technologies's IRFB4137PBFAKSA1 is a widely used component part in electronic designs. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 300 V, current, continuous drain (id) @ 25°C: 38A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 69mOhm @ 24A, 10V. This part has a typical lead time of 140 Days from factory. Simplytronix supplies IRFB4137PBFAKSA1 with same-day shipping and guaranteed authenticity.

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