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IRFB5615PBFXKMA1

Mfr. No: IRFB5615PBFXKMA1
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs IR FET >60-400V
Lifecycle: Active
Datasheet: IRFB5615PBFXKMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 50 V
FET Feature -
Power Dissipation (Max) 144W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,091
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 147 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

As a mosfets component, the IRFB5615PBFXKMA1 is manufactured and supplied by Infineon Technologies. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 150 V, current, continuous drain (id) @ 25°C: 35A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 39mOhm @ 21A, 10V. This part has a typical lead time of 147 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IRFB5615PBFXKMA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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