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IRFH5020TRPBF Infineon Technologies
*For representation only.

IRFH5020TRPBF

Mfr. No: IRFH5020TRPBF
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs 200V 1 N-CH HEXFET 55mOhms 11nC
Lifecycle: Not For New Designs
Datasheet: IRFH5020TRPBF Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 100 V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 8.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 4000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,854
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 105 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

The IRFH5020TRPBF from Infineon Technologies falls under the mosfets category. Notable characteristics of this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 200 V, current, continuous drain (id) @ 25°C: 5.1A (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 55mOhm @ 7.5A, 10V. This part has a typical lead time of 105 Days from factory and ships with a full manufacturer datasheet available for download. IRFH5020TRPBF is available through Simplytronix, sourced and verified for authenticity.

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