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IRFP7530PBFXKMA1

Mfr. No: IRFP7530PBFXKMA1
Mfr.: Infineon Technologies
Description: IR FET UP TO 60V
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 411 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13703 pF @ 25 V
FET Feature -
Power Dissipation (Max) 341W (Tc)
Operating Temperature -55°C ~ 175°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-901
Package / Case TO-247-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 400
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,100
Units In Stock
📦 Reel
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🔑 Key Specifications
Category
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 112 Days (from factory)
📄 Documentation
Datasheet not available
ℹ Product Overview

Infineon Technologies manufactures the IRFP7530PBFXKMA1, a component part used in electronic assemblies. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 195A (Tc), drive voltage: 6V, 10V and rds on (max) @ id, vgs: 2mOhm @ 100A, 10V. This part has a typical lead time of 112 Days from factory. You can source IRFP7530PBFXKMA1 through Simplytronix, with fast shipping and verified authenticity.

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