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IRLR024NTRPBF Infineon Technologies
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IRLR024NTRPBF

Mfr. No: IRLR024NTRPBF
Mfr.: Infineon Technologies
Category: MOSFETs
Description: MOSFETs 55V 1 N-CH HEXFET 65mOhms 10nC
Lifecycle: Active
Datasheet: IRLR024NTRPBF Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 25 V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252AA (DPAK)
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging IRLR024NTRLPBF
Suggested Replacement
7,675
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 105 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

IRLR024NTRPBF is a mosfets part produced by Infineon Technologies for use across a range of applications. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 55 V, current, continuous drain (id) @ 25°C: 17A (Tc), drive voltage: 4V, 10V and rds on (max) @ id, vgs: 65mOhm @ 10A, 10V. This part has a typical lead time of 105 Days from factory and ships with a full manufacturer datasheet available for download. Order IRLR024NTRPBF from Simplytronix for authenticated stock and same-day order processing.

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